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| SI7921DN New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) () 0.063 @ VGS = -10 V 0.110 @ VGS = -4.5 V ID (A) -5.1 -3.8 FEATURES * TrenchFET(R) Power MOSFETS * New Low Thermal Resistance PowerPAK(R) Package Pb-free Available APPLICATIONS * Portable - Battery Switch - Load Switch RoHS* COMPLIANT PowerPAK 1212-8 S1 S1 S2 3.30 mm 1 2 3.30 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: SI7921DN-T1 SI7921DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25C TA = 85C TA = 25C TA = 85C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs -30 20 -5.1 -3.7 -20 -2.1 2.5 1.3 -55 to 150 260 -1.1 1.3 0.85 -3.7 -2.7 Steady State Unit V A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t 10 sec Steady State Steady State Symbol RthJA Typical 40 75 5.6 Maximum 50 94 7 Unit C/W Maximum Junction-to-Case RthJC Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72341 S-51210-Rev. B, 27-Jun-05 www.vishay.com 1 SI7921DN Vishay Siliconix New Product SPECIFICATIONS TJ = 25C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -2.1 A, di/dt = 100 A/s VDD = -15 V, RL = 15 ID -1 A, VGEN = -10 V, RG = 6 VDS = -15 V, VGS = -10 V, ID = -5.1 A 10.5 1.8 2.8 8.5 10 15 25 20 25 15 25 40 30 50 ns 16 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55C VDS -5 V, VGS = -10 V VGS = -10 V, ID = -5.1 A VGS = -4.5 V, ID = -3.8 A VDS = -15 V, ID = -5.1 A IS = -2.1 A, VGS = 0 V -20 0.050 0.085 9 -0.8 -1.2 0.063 0.110 -1.0 -3.0 100 -1 -5 A A S V V nA Symbol Test Condition Min Typ Max Unit Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25C, unless otherwise noted 20 VGS =10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 TC = -55C 25C 12 4V 8 12 125C 8 4 3V 0 0 1 2 3 4 5 4 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 72341 S-51210-Rev. B, 27-Jun-05 SI7921DN New Product TYPICAL CHARACTERISTICS 0.30 Vishay Siliconix TA = 25C, unless otherwise noted 800 r DS(on) - On-Resistance ( ) 0.25 C - Capacitance (pF) 600 Ciss 400 0.20 0.15 VGS = 4.5 V 0.10 VGS = 10 V 0.05 200 Coss Crss 0.00 0 4 8 12 16 20 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.1 A 8 rDS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 10 V ID = 5.1 A Capacitance 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge 0.30 TJ = 150C I S - Source Current (A) 10 r DS(on) - On-Resistance ( ) On-Resistance vs. Junction Temperature 20 0.25 ID = 5.1 A 0.20 0.15 0.10 0.05 TJ = 25C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72341 S-51210-Rev. B, 27-Jun-05 www.vishay.com 3 SI7921DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS TA = 25C, unless otherwise noted 0.6 30 25 0.4 V GS(th) Variance (V) 0.2 Power (W) ID = 250 A 20 15 10 0.0 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 rDS(on) Limited Single Pulse Power, Juncion-To-Ambient IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 TA = 25C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-To-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72341 S-51210-Rev. B, 27-Jun-05 SI7921DN New Product TYPICAL CHARACTERISTICS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix TA = 25C, unless otherwise noted 0.2 0.1 0.02 0.1 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72341. Document Number: 72341 S-51210-Rev. B, 27-Jun-05 www.vishay.com 5 |
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